The INNOSILICON™ GDDR6X/6 PHY is fully compliant with the JEDEC GDDR6X/6 standard, supporting data rates of up to 20 Gbps per pin for PAM2 GDDR6 mode and 24 Gbps for PAM4 GDDR6X mode. The GDDR6X/6 interface supports 2 channels, with 16 bits each for a total data width of 32 bits per memory device. With a maximum speed of 20 Gbps/24 Gbps per pin, the INNOSILICON™ GDDR6X/6 Combo PHY delivers a peak bandwidth of up to 80 GB/s or 96 GB/s per memory device. Designed for advanced FinFET process nodes, this PHY is optimized for seamless integration into high-bandwidth and low-latency applications.
INNOSILICON™ comprehensive product portfolio also includes full GDS delivery, signal integrity and power integrity (SI/PI) analysis, verification models, prototyping support, and simulation tools. These offerings empower customers to accelerate development cycles, ensure robust performance, and stay ahead in the competitive landscape of high-performance memory solutions.